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2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Features * Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "WE-". 2SC5757 Absolute Maximum Ratings (Ta = 25 C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 1.5 80 80 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10 80 0.9 4.5 8 Typ 100 1.2 6.5 11 1.1 Max 600 200 100 130 1.5 2.0 Unit V nA nA nA pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.4, Jul. 2001, page 2 of 10 2SC5757 Collector Power Dissipation Curve 100 Pc (mW) IC (mA) Typical Output Characteristics 50 500 A A 450 400 A 350 A 80 60 40 A 300 250 A Collector Power Dissipation 30 Collector Current 200 A 40 20 150 A 100 A 20 10 IB = 50 A 0 50 100 150 Ta (C) 200 0 0.5 1 1.5 2 2.5 3 3.5 Ambient Temperature Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 50 IC (mA) hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 1 V VCE = 1 V 40 30 Collector Current DC Current Transfer Ratio 100 20 10 0 0 0.2 0.4 0.6 0.8 VBE (V) 1 1 2 5 10 20 50 100 Base to Emitter Voltage Collector Current IC (mA) Rev.4, Jul. 2001, page 3 of 10 2SC5757 Collector Output Capacitance vs. Collector to Base Voltage fT (GHz) Gain Bandwidth Product vs. Collector Current 20 VCE = 1 V f = 2 GHz 16 Collector Output Capacitance Cob (pF) 2.0 1.6 IE = 0 f = 1 MHz 1.2 Gain Bandwidth Product 12 8 0.8 0.4 4 0 1 2 5 10 20 50 100 0 0.4 0.8 1.2 1.6 2.0 Collector to Base Voltage VCB (V) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 |S21|2 (dB) Power Gain vs. Collector Current 20 VCE = 1 V f = 900 MHz 16 (dB) 16 VCE = 1 V f = 2 GHz S21 Parameter 8 Power Gain PG 12 12 8 4 4 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.4, Jul. 2001, page 4 of 10 2SC5757 Noise Figure vs. Collector Current 5 VCE = 1V f = 900 MHz NF (dB) Noise Figure 4 3 2 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.4, Jul. 2001, page 5 of 10 2SC5757 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency Scale: 8 / div. 90 120 60 -150 -30 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. 90 120 60 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) Rev.4, Jul. 2001, page 6 of 10 2SC5757 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.797 0.695 0.638 0.594 0.571 0.558 0.548 0.545 0.539 0.541 0.542 0.543 0.546 0.546 0.552 0.558 0.558 0.570 0.577 0.578 ANG -40.0 -75.2 -100.7 -117.6 -130.8 -140.3 -148.5 -154.4 -160.1 -164.6 -169.1 -171.9 -175.6 -178.4 179.4 176.4 174.2 171.7 169.6 167.8 S21 MAG 14.26 11.44 9.03 7.23 6.00 5.13 4.43 3.93 3.52 3.20 2.93 2.71 2.53 2.36 2.23 2.10 2.00 1.90 1.81 1.75 ANG 154.3 133.4 119.6 110.7 103.8 98.8 94.6 90.9 88.0 85.0 82.5 80.2 77.9 75.6 73.8 71.6 70.1 68.5 66.6 65.3 S12 MAG 0.048 0.081 0.099 0.109 0.116 0.122 0.128 0.134 0.139 0.145 0.150 0.156 0.163 0.169 0.176 0.183 0.191 0.198 0.206 0.214 ANG 69.8 54.5 46.6 42.7 41.1 41.1 41.2 42.6 43.6 45.0 46.3 48.1 49.1 50.5 51.8 52.8 54.0 55.0 56.1 56.7 S22 MAG 0.881 0.709 0.559 0.457 0.388 0.336 0.300 0.274 0.254 0.238 0.227 0.221 0.213 0.209 0.207 0.205 0.206 0.207 0.210 0.212 ANG -28.5 -52.2 -69.4 -81.5 -91.3 -99.7 -107.0 -113.5 -120.0 -125.7 -130.8 -135.9 -141.1 -144.8 -149.5 -153.0 -156.9 -160.7 -163.9 -167.7 Rev.4, Jul. 2001, page 7 of 10 2SC5757 (VCB = 1 V, IC = 20 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.512 0.523 0.531 0.533 0.540 0.539 0.541 0.543 0.545 0.547 0.550 0.552 0.557 0.566 0.570 0.569 0.570 0.580 0.588 0.587 ANG -94.1 -134.9 -151.8 -161.4 -168.0 -172.3 -176.7 -179.7 177.0 174.3 171.8 170.0 167.3 165.5 163.7 162.0 160.2 158.3 157.6 154.9 S21 MAG 30.18 18.31 12.60 9.53 7.67 6.43 5.49 4.83 4.30 3.91 3.57 3.29 3.05 2.87 2.68 2.54 2.41 2.29 2.19 2.12 ANG 133.2 112.6 102.9 97.8 93.7 90.7 88.2 86.0 84.3 82.1 80.6 79.0 77.5 75.8 74.4 73.2 71.4 70.8 69.2 68.0 S12 MAG 0.031 0.044 0.054 0.065 0.076 0.088 0.100 0.111 0.123 0.135 0.148 0.159 0.172 0.184 0.197 0.208 0.220 0.233 0.244 0.256 ANG 60.2 54.5 57.1 60.5 63.2 65.5 66.6 67.8 68.4 69.1 69.5 69.9 69.8 70.0 70.0 69.9 69.5 69.2 69.4 69.1 S22 MAG 0.643 0.459 0.386 0.355 0.341 0.333 0.330 0.328 0.328 0.329 0.329 0.332 0.334 0.336 0.339 0.341 0.345 0.350 0.355 0.360 ANG -66.8 -104.5 -126.5 -140.6 -150.2 -157.8 -163.7 -168.7 -172.9 -176.7 -180.0 176.9 174.2 171.5 169.2 167.1 164.7 162.8 161.0 158.8 Rev.4, Jul. 2001, page 8 of 10 2SC5757 Package Dimensions As of January, 2001 Unit: mm 0.2 1.4 0.05 1.2 0.05 0.8 0.1 0.2 0.45 0.9 0.1 0.45 0.6 MAX Hitachi Code JEDEC EIAJ Mass (reference value) (0.1) (0.1) 3-0.2 +0.1 -0.05 0.15 +0.1 -0.05 MFPAK 0.0016 g Rev.4, Jul. 2001, page 9 of 10 2SC5757 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.4, Jul. 2001, page 10 of 10 |
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